公开(公告)号：US20150155090A1

公开(公告)日：2015-06-04

申请号：US14409398

申请日：2013-07-03

Applicant: ALSTOM Technology Ltd

Inventor： Alistair Burnett ,  Robert Riley

IPC: H01F27/28

CPC classification number: H01F27/2804 ,  H01F27/288 ,  H01F27/32 ,  H01F2027/2809 ,  H01F2027/2819

Abstract: A transformer (30) comprises: first and second printed circuit board substrates, the first printed circuit board substrate (32) including at least one first substrate layer (34) having a dielectric relative permittivity of less than or equal to 3.5 and the second printed circuit board substrate including at least one second substrate layer (70) having a dielectric relative permittivity that is higher than the dielectric relative permittivity of the or each first substrate layer (34); and a plurality of electrically conductive traces, at least one electrically conductive trace being patterned on a surface of the first substrate layer (34) or one of the first substrate layers (34) to form a second winding portion (52) and at least one other electrically conductive trace being patterned on a surface of the second substrate layer (70) or one of the second substrate layers (70) to form a first winding portion (50), the first and second winding portions (50,52) defining mutually coupled first and second windings, wherein the first winding is formed by one or more first winding portions (50), the second winding is formed by one or more second winding portions (52), the second winding is formed on the first substrate layer (34) or at least one of the first substrate layers (34), and the first winding is formed on the second substrate layer (70) or at least one of the second substrate layers (70).

Abstract translation: 变压器（30）包括：第一和第二印刷电路板基板，第一印刷电路板基板（32）包括至少一个介电相对介电常数小于或等于3.5的第一基板层（34）和第二印刷电路板 电路板基板，包括至少一个第二基板层（70），该第二基板层具有高于或每个第一基板层（34）的介电相对介电常数的介电相对介电常数; 和多个导电迹线，至少一个导电迹线被图案化在第一基底层（34）的表面上或者第一基底层（34）中的一个上以形成第二缠绕部分（52），并且至少一个 其它导电迹线被图案化在第二基底层（70）或第二基底层（70）中的一个的表面上以形成第一缠绕部分（50），第一和第二缠绕部分（50,52） 第一绕组由一个或多个第一绕组部分（50）形成，第二绕组由一个或多个第二绕组部分（52）形成，第二绕组形成在第一基片层上 34）或第一衬底层（34）中的至少一个，并且第一绕组形成在第二衬底层（70）或第二衬底层（70）中的至少一个上。