-
公开(公告)号:US12117415B2
公开(公告)日:2024-10-15
申请号:US16613584
申请日:2018-05-15
Inventor: Helen Berney , Alan O'Donnell , Thomas O'Dwyer , Alfonso Berduque
IPC: G01N27/333 , G01N27/414 , G01N27/416
CPC classification number: G01N27/333 , G01N27/414 , G01N27/4163
Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
-
公开(公告)号:US20250085252A1
公开(公告)日:2025-03-13
申请号:US18886682
申请日:2024-09-16
Inventor: Helen Berney , Alan O'Donnell , Thomas O'Dwyer , Alfonso Berduque
IPC: G01N27/333 , G01N27/414 , G01N27/416
Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
-