METHOD AND APPARATUS FOR CURRENT LIMIT TEST FOR HIGH POWER SWITCHING REGULATOR
    1.
    发明申请
    METHOD AND APPARATUS FOR CURRENT LIMIT TEST FOR HIGH POWER SWITCHING REGULATOR 有权
    用于大功率开关稳压器的电流限制测试的方法和装置

    公开(公告)号:US20140282349A1

    公开(公告)日:2014-09-18

    申请号:US14028792

    申请日:2013-09-17

    CPC classification number: G06F17/5063 G06F2217/78

    Abstract: A method can reuse at least one pin in demultiplexing (demuxing) a voltage from a pin. The method can be used to set an accurate current limit threshold in a design for test (DFT) phase and, thus, to accurately set a trimming code of a current limiter. The method uses the property that a power MOSFET has almost a same conductive resistance at a large drain current. Thus, the current limit threshold can be set according to an accurate drain-to-source voltage Vds at a small current sink that is less than a maximum current that ATE is able to provide. An accurate voltage Vds can be measured through Kelvin sensing drain and source pins of the power MOSFET, which are connected to a current sense circuit.

    Abstract translation: 一种方法可以在从引脚解复用(解调))电压时重用至少一个引脚。 该方法可用于在测试(DFT)相位的设计中设置精确的电流限制阈值,从而准确地设置限流器的修整代码。 该方法使用功率MOSFET在大漏极电流下具有几乎相同的导电电阻的性质。 因此,可以根据小于ATE能够提供的最大电流的小电流宿的准确的漏极 - 源极电压Vds来设置电流限制阈值。 可以通过连接到电流检测电路的功率MOSFET的开尔文感测漏极和源极引脚来测量精确的电压Vds。

    Method and apparatus for current limit test for high power switching regulator
    2.
    发明授权
    Method and apparatus for current limit test for high power switching regulator 有权
    大功率开关调节器电流限制测试方法和装置

    公开(公告)号:US08887119B2

    公开(公告)日:2014-11-11

    申请号:US14028792

    申请日:2013-09-17

    CPC classification number: G06F17/5063 G06F2217/78

    Abstract: A method can reuse at least one pin in demultiplexing (demuxing) a voltage from a pin. The method can be used to set an accurate current limit threshold in a design for test (DFT) phase and, thus, to accurately set a trimming code of a current limiter. The method uses the property that a power MOSFET has almost a same conductive resistance at a large drain current. Thus, the current limit threshold can be set according to an accurate drain-to-source voltage Vds at a small current sink that is less than a maximum current that ATE is able to provide. An accurate voltage Vds can be measured through Kelvin sensing drain and source pins of the power MOSFET, which are connected to a current sense circuit.

    Abstract translation: 一种方法可以在从引脚解复用(解调))电压时重用至少一个引脚。 该方法可用于在测试(DFT)相位的设计中设置精确的电流限制阈值,从而准确地设置限流器的修整代码。 该方法使用功率MOSFET在大漏极电流下具有几乎相同的导电电阻的性质。 因此,可以根据小于ATE能够提供的最大电流的小电流宿的准确的漏极 - 源极电压Vds来设置电流限制阈值。 可以通过连接到电流检测电路的功率MOSFET的开尔文感测漏极和源极引脚来测量精确的电压Vds。

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