公开(公告)号：US20150170911A1

公开(公告)日：2015-06-18

申请号：US14108035

申请日：2013-12-16

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Paul Martin Lambkin ,  Padraig L. Fitzgerald ,  Bernard Patrick Stenson ,  Raymond C. Goggin ,  Seamus A. Lynch ,  William A. Lane

IPC: H01L21/02

CPC classification number: H01L21/02524 ,  H01H59/0009 ,  H01H2059/0018 ,  H01L21/02002 ,  H01L21/02373 ,  H01L21/322

Abstract: A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.

Abstract translation: 提供硅衬底，其可以通过使用由Czochralski工艺形成的硅层并且具有沉积在硅层上的载流子寿命消除层，更便宜地形成RF部件。