公开(公告)号：US20180205018A1

公开(公告)日：2018-07-19

申请号：US15744029

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab PARK ,  Bo-Ram KIM ,  Jun-Gyu HUR ,  Doh-Hoon KIM

IPC: H01L51/00 ,  H01L51/56 ,  C23C14/04 ,  G03F7/30 ,  B23K26/364 ,  B23K26/082 ,  B23K26/0622

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.