公开(公告)号：US09673277B2

公开(公告)日：2017-06-06

申请号：US14885521

申请日：2015-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Adam Brand ,  Bingxi Sun Wood ,  Naomi Yoshida ,  Lin Dong ,  Shiyu Sun ,  Chi-Nung Ni ,  Yihwan Kim

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L21/762 ,  H01L21/306

CPC classification number: H01L29/0673 ,  H01L21/30612 ,  H01L21/76224 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.