公开(公告)号：US20160276214A1

公开(公告)日：2016-09-22

申请号：US14717740

申请日：2015-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Xinyu FU ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Seshadri GANGULI ,  Guoqiang JIAN ,  Yixiong YANG ,  Vikash BANTHIA ,  Jonathan BAKKE

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WCIx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。