公开(公告)号：US11162170B2

公开(公告)日：2021-11-02

申请号：US14599831

申请日：2015-01-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan A. Ritchie ,  Zhenbin Ge ,  Jenn Yue Wang ,  Sally Lou

IPC: C23C14/58 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.