公开(公告)号：US20180233372A1

公开(公告)日：2018-08-16

申请号：US15434051

申请日：2017-02-15

Applicant: ASM IP HOLDING B.V.

Inventor： Katja Väyrynen ,  Ritala Mikko ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/06 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.