公开(公告)号：US20230064120A1

公开(公告)日：2023-03-02

申请号：US17822576

申请日：2022-08-26

Applicant: ASM IP Holding, B.V

Inventor： Timo Hatanpää ,  Anton Viheraara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08

Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.