公开(公告)号：US20250037994A1

公开(公告)日：2025-01-30

申请号：US18782382

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi ,  Abhudaya Mishra ,  Alexey Remnev

IPC: H01L21/02 ,  H01J37/32

Abstract: A method of filling trenches on a surface of a substrate is provided. The method may comprise the steps of: positioning a substrate on a substrate support, the substrate support disposed within a reaction chamber, wherein a pressure of the reaction chamber is less than 200 Pa; flowing a carbon precursor into the reaction chamber continuously; flowing an etching gas into the reaction chamber continuously; generating a plasma in the reaction chamber by applying a first radio frequency (RF) power to one of one or more electrodes of the reaction chamber; and depositing an amorphous carbon layer in the trenches on the substrate.