公开(公告)号：US20230127833A1

公开(公告)日：2023-04-27

申请号：US18048188

申请日：2022-10-20

Applicant: ASM IP Holding B.V.

Inventor： Steven Van Aerde ,  Juan Su

IPC: H01L21/02

Abstract: A method and a wafer processing furnace for forming a doped polysilicon layer on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a plurality of substrates to a process chamber. It also comprises executing a deposition cycle comprising providing a silicon-containing precursor to the process chamber thereby depositing, on the plurality of substrates, an undoped silicon layer until a pre-determined thickness is reached and providing the process chamber with a flow of a dopant precursor gas without providing the silicon-containing precursor to the process chamber. The method also comprises performing a heat treatment process, thereby forming the doped polysilicon layer.