公开(公告)号：US20240279800A1

公开(公告)日：2024-08-22

申请号：US18438765

申请日：2024-02-12

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Paloma Ruiz Y Kärkkäinen ,  Mikko Ritala ,  Anton Vihervaara ,  Matti Putkonen

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45553

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal carbide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal carbide-containing material on the substrate. The second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid.