公开(公告)号：US20220178023A1

公开(公告)日：2022-06-09

申请号：US17543023

申请日：2021-12-06

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Naoki Umehara ,  Yu Min Huang

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/505 ,  C23C16/56

Abstract: Methods and systems for forming a structure including silicon-carbon material and structures formed using the methods or systems are disclosed. Exemplary methods include providing a first gas to the reaction space, providing a silicon-carbon precursor to the reaction space, ceasing a flow of the silicon-carbon precursor to the reaction space, forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate, and optionally treating the silicon-carbon material with activated species to form treated silicon-carbon material.