公开(公告)号：US20230175129A1

公开(公告)日：2023-06-08

申请号：US18072764

申请日：2022-12-01

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Petri Raisanen ,  Po-Yi Su

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/34 ,  C23C16/08

CPC classification number: C23C16/45534 ,  C23C16/4408 ,  C23C16/34 ,  C23C16/08

Abstract: Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.