公开(公告)号：US20210332479A1

公开(公告)日：2021-10-28

申请号：US17236782

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： KiKang KIM ,  HakYong KWON ,  HieChul KIM ,  SungKyu KANG ,  SeungHwan LEE ,  SungBae KIM ,  JongHyun AHN ,  SeongRyeong KIM ,  KyuMin KIM ,  YoungMin KIM

IPC: C23C16/455 ,  H01L21/3065 ,  H01L21/02 ,  C23C16/56

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.