公开(公告)号：US20250038048A1

公开(公告)日：2025-01-30

申请号：US18912027

申请日：2024-10-10

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US12154824B2

公开(公告)日：2024-11-26

申请号：US17399049

申请日：2021-08-11

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.