公开(公告)号：US20230035488A1

公开(公告)日：2023-02-02

申请号：US17789160

申请日：2020-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Elie BADR

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/13 ,  G06T7/194

Abstract: A metrology method comprising: performing a first exposure on a substrate to form a first patterned layer including a plurality of first target units, each first target unit comprising a first target feature; performing a second exposure on the substrate to form a second patterned layer comprising second target units overlying respective ones of the first target units, each of the second target units having a second target feature, wherein ones of the second target units have the second target feature positioned at respectively different offsets relative to a reference position: imaging the second target units overlaid on the first target units; and determining an edge placement error based on positions of edges of second target features in second target units relative to edges of the first target feature of the underlying first target unit.