公开(公告)号：US20190204755A1

公开(公告)日：2019-07-04

申请号：US16220023

申请日：2018-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Harm Hubertus Joseph Elizabeth KICKEN ,  Martijn Maria ZAAL

IPC: G03F7/20

Abstract: A method is described herein including applying, by a metrology apparatus, an incident radiation beam to a substrate including first features on a first layer and second features on a second layer, a relationship between the first and second features being characterized by a parameter of interest having a first value, wherein the metrology apparatus is operated in accordance with at least one characteristic having a first setting; receiving intensity data representing intensity of a portion of the incident radiation beam scattered by the first and second features; determining, based on the intensity data, a second value of the parameter of interest; and applying one or more adjustments to the at least one characteristic such that the at least one characteristic has a second setting different from the first, the one or more adjustments being determined based on a difference between the first value and the second value.