公开(公告)号：US20200218169A1

公开(公告)日：2020-07-09

申请号：US16638552

申请日：2018-08-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Leon Paul VAN DIJK ,  IIya MALAKHOVSKY ,  Ronald Henricus Johannes OTTEN ,  Mahdi SADEGHINIA

IPC: G03F7/20 ,  G03F9/00

Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.

公开(公告)号：US20210165335A1

公开(公告)日：2021-06-03

申请号：US17267974

申请日：2019-07-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul VAN DIJK ,  Richard Johannes Franciscus VAN HAREN ,  Subodh SINGH ,  IIya MALAKHOVSKY ,  Ronald Henricus Johannes OTTEN ,  Amandev SINGH

IPC: G03F7/20

Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.