公开(公告)号：US20180341182A1

公开(公告)日：2018-11-29

申请号：US15977866

申请日：2018-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Gonzalo Roberto SANGUINETTI ,  Nicolas Mauricio WEISS ,  Jean-Pierre Agnes Henricus Marie VAESSEN

IPC: G03F7/20

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

公开(公告)号：US20210255552A1

公开(公告)日：2021-08-19

申请号：US17241142

申请日：2021-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis TSIATMAS ,  Samee Ur REHMAN ,  Paul Christiaan HINNEN ,  Jean-Pierre Agnes Henricus Marie VAESSEN ,  Nicolas Mauricio WEISS ,  Gonzalo Roberto SANGUINETTI ,  Thomai ZACHAROPOULOU ,  Martijn Maria ZAAL

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.