公开(公告)号：US20210181618A1

公开(公告)日：2021-06-17

申请号：US16761683

申请日：2018-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Adrianus Johannes Maria GIESBERS ,  Johan Hendrik KLOOTWIJK ,  Evgenia KURGANOVA ,  Maxim Aleksandrovich NASALEVICH ,  Arnoud Willem NOTENBOOM ,  Mária PÉTER ,  Leonid Aizikovitsj SJMAENOK ,  Ties Wouter VAN DER WOORD ,  David Ferdinand VLES

IPC: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

公开(公告)号：US20240302734A1

公开(公告)日：2024-09-12

申请号：US18617149

申请日：2024-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Arianus Johannes Maria GIESBERS ,  Johan Hendrik KLOOTWIJK ,  Evgenia KURGANOVA ,  Maxim Aleksandrovich NASALEVICH ,  Arnoud Willem NOTENBOOM ,  Mària PÉTER ,  Leonid Aizikovitsj SJMAENOK ,  Ties Wouter VAN DER WOORD ,  David Ferdinand VLES

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.