公开(公告)号：US11768441B2

公开(公告)日：2023-09-26

申请号：US17801381

申请日：2021-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Steven Erik Steen ,  Pieter Gerardus Jacobus Smorenberg ,  Khalid Elbattay

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70525

Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

公开(公告)号：US11385554B2

公开(公告)日：2022-07-12

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Steven Erik Steen ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers ,  Pierre-Yves Jerome Yvan Guittet ,  Frank Staals ,  Paulus Jacobus Maria Van Adrichem

IPC: G03F7/20 ,  G03F1/44 ,  G03F1/84

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.