公开(公告)号：US20220373894A1

公开(公告)日：2022-11-24

申请号：US17766049

申请日：2020-09-07

Applicant: ASML Netherlands B.V.

Inventor： Andre Bernardus JEUNINK ,  Erik Henricus Egidius Ca EUMMELEN ,  Bearrach MOEST ,  Derk ONCK ,  Johannes Adrianus Cornelis M PIJNENBURG ,  Hermen Folken PEN

IPC: G03F7/20 ,  G03F1/84

Abstract: A method is provided for determining surface parameters of a patterning device, comprising the steps of: positioning the patterning device with respect to a path of an exposure radiation beam using a first measurement system, providing the patterning device at a first focal plane of a chromatic lens arranged in a second measurement system, illuminating a part of a surface of the patterning device with radiation through the chromatic lens, wherein the radiation comprises a plurality of wavelengths, determining a position of the illuminated part of the patterning device in a first and second direction, collecting at least a portion of radiation reflected by the patterning device through the chromatic lens, measuring an intensity of the collected portion of radiation as a function of wavelength, to obtain spectral information of the illuminated area, and determining the surface parameters of the patterning device at the determined position from the spectral information.