公开(公告)号：US10401732B2

公开(公告)日：2019-09-03

申请号：US15451328

申请日：2017-03-06

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Hsu ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

IPC: G03F7/20

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.