公开(公告)号：US12194566B2

公开(公告)日：2025-01-14

申请号：US18117146

申请日：2023-03-03

Applicant: ASUSTEK COMPUTER INC.

Inventor： Yun-Wei Tsai ,  Hsien-Yeh Chen ,  Shu-Man Hu ,  Chin-Yun Lee ,  Yi-Chang Wu ,  Yen-Hsun Lin ,  Kuo-Wei Tsao ,  Chi-Liang Tsai

IPC: B23K26/352 ,  C01B32/184 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C04B41/87 ,  C08G61/02 ,  H01J37/32

Abstract: A method for producing graphene, configured for forming a graphene layer on a surface of an object. The method includes steps of: depositing a poly-p-xylene material layer on the surface: and converting the poly-p-xylene material layer into a graphene layer by using a laser sintering process or a plasma-assisted sintering process.