公开(公告)号：US20230115954A1

公开(公告)日：2023-04-13

申请号：US17500920

申请日：2021-10-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： En Hao HSU ,  Kuo Hwa TZENG ,  Chia-Pin CHEN ,  Chi Long TSAI

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/16

摘要： An electronic device package and manufacturing method thereof are provided. The electronic device package includes an electronic component including an active surface, a patterned conductive layer disposed on the active surface, an encapsulation layer disposed over the patterned conductive layer, and a buffer layer disposed between the patterned conductive layer and the encapsulation layer. The buffer layer is shaped and sized to alleviate a stress generated due to an interaction between the patterned conductive layer and the encapsulation layer.