公开(公告)号：US20200279804A1

公开(公告)日：2020-09-03

申请号：US16289156

申请日：2019-02-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen Hung HUANG ,  Huei-Shyong CHO ,  Jhao-Yang CHEN

IPC: H01L23/522 ,  H01L25/16 ,  H01L23/00 ,  H01L23/528 ,  H01L21/66 ,  H01L21/768

Abstract: A wiring structure includes an upper conductive structure, a lower conductive structure, an intermediate layer and at least one lower through via. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the upper dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The lower through via extends through at least a portion of the lower conductive structure and the intermediate layer, and is electrically connected to the upper circuit layer of the upper conductive structure.