公开(公告)号：US11600567B2

公开(公告)日：2023-03-07

申请号：US16528352

申请日：2019-07-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chih-Cheng Lee ,  Kuang Hsiung Chen

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768

Abstract: A semiconductor device package includes a first circuit layer, a second circuit layer, a first semiconductor die and a second semiconductor die. The first circuit layer includes a first surface and a second surface opposite to the first surface. The second circuit layer is disposed on the first surface of the first circuit layer. The first semiconductor die is disposed on the first circuit layer and the second circuit layer, and electrically connected to the first circuit layer and the second circuit layer. The second semiconductor die is disposed on the second circuit layer, and electrically connected to the second circuit layer.