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公开(公告)号：US10325854B2
公开(公告)日：2019-06-18
申请号：US15652821
申请日：2017-07-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Kun-Ming Chen , Yuan-Feng Chiang
IPC: H01L23/538 , H01L21/48 , H01L25/10 , H01L25/00
Abstract: An interposer comprises a first conductive wire having a first terminal and a second terminal, a first oxide layer, and an encapsulant. The first oxide layer covers the first conductive wire and exposes the first terminal and the second terminal of the first conductive wire. The encapsulant covers the first oxide layer and exposes the first terminal and the second terminal of the first conductive wire.
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