摘要:
A highly reliable semiconductor device is provided. A silicon nitride film having an opening is formed on a main surface of a silicon substrate. The opening is formed with a side surface. The silicon substrate is etched using the silicon nitride film as a mask to form a trench. The side surface of the silicon nitride film is altered in quality to form a silicon oxide film. A silicon oxide film filling the trench is formed in contact with the silicon oxide film. The silicon nitride film is removed with the silicon oxide film in contact with the silicon oxide film remaining.
摘要:
There is disclosed a molding compound for making an article including a cellulose fiber, which is prepared by mixing a cellulose fiber added with at least starch, water and a long chain fatty acid salt of a non-alkali metal. There is also described a method for molding an article including a cellulose fiber by employing the above compound and, further, a mold for molding an article including a cellulose fiber with a cavity formed by a stationary side and a movable side which is used therefore.