公开(公告)号：US06433399B1

公开(公告)日：2002-08-13

申请号：US09415022

申请日：1999-10-07

申请人： Albert Polman ,  Nicholas Hamelin ,  Peter Kik ,  Salvatore Coffa ,  Ferruccio Frisina ,  Mario Saggio

发明人： Albert Polman ,  Nicholas Hamelin ,  Peter Kik ,  Salvatore Coffa ,  Ferruccio Frisina ,  Mario Saggio

IPC分类号： H01L310232

CPC分类号： G02B6/12004 ,  H01L31/0352 ,  H01L31/103

摘要： An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projecting structure extending on a substrate, including a reflecting layer and laterally delimited by a protection and containment oxide region. At least one portion of the waveguide is formed by the PN junction and has an end fed with light to be detected. The detector device has electrodes disposed laterally to and on the waveguide to enable efficient gathering of charge carriers generated by photoconversion.

摘要翻译： 具有由掺杂有稀土离子的第一半导体材料区域和具有相反掺杂型的第二半导体材料区域形成的PN结的红外检测器装置。 检测器装置包括由在衬底上延伸的突出结构形成的波导，包括反射层，并由保护和容纳氧化物区域横向界定。 波导的至少一部分由PN结形成，并且具有馈送待检测光的端部。 检测器装置具有横向设置在波导上的电极，以使得能够有效地收集通过光转换产生的电荷载流子。