公开(公告)号：US10294524B2

公开(公告)日：2019-05-21

申请号：US15088549

申请日：2016-04-01

申请人： Alexander K. Zettl ,  Gabriel P. Dunn ,  Stephen M. Gilbert

发明人： Alexander K. Zettl ,  Gabriel P. Dunn ,  Stephen M. Gilbert

IPC分类号： C12Q1/6869 ,  G01N33/487

摘要： This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.

公开(公告)号：US20160334366A1

公开(公告)日：2016-11-17

申请号：US15088549

申请日：2016-04-01

申请人： Alexander K. Zettl ,  Gabriel P. Dunn ,  Stephen M. Gilbert

发明人： Alexander K. Zettl ,  Gabriel P. Dunn ,  Stephen M. Gilbert

IPC分类号： G01N27/447 ,  G01N33/487 ,  C12Q1/68 ,  H01J37/305

CPC分类号： C12Q1/6869 ,  G01N33/48721 ,  C12Q2565/631

摘要： This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.

摘要翻译： 本公开提供了与其中具有孔的少层和单层六方氮化硼相关的系统，方法和装置。 一方面，一种方法包括提供一片六方氮化硼（h-BN）。 在h-BN片中产生缺陷。 将h-BN片加热到约500℃以上的温度。用带电粒子照射h-BN片中的缺陷，将缺陷扩大到片材中的六边形孔或平行四边形孔 的h-BN。