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公开(公告)号:US20070054103A1
公开(公告)日:2007-03-08
申请号:US11220817
申请日:2005-09-07
IPC分类号: D04H13/00
CPC分类号: C04B35/62884 , C04B35/565 , C04B35/62863 , C04B35/62868 , C04B35/62873 , C04B35/62894 , C04B35/806 , C04B2235/5248 , C04B2235/614 , Y10T428/249924
摘要: A method for reducing oxidation in ceramic composites is provided. The method includes depositing a first portion of a silicon carbide (SiC) matrix over at least a portion of an article using a first chemical vapor infiltration (CVI) process, depositing a silicon (Si)-doped boron nitride (BN) layer within at least a portion of the SiC matrix using a second CVI process, and depositing a second portion of the SiC matrix within at least a portion or continuation of the first portion of the SiC matrix using a third CVI process.
摘要翻译: 提供了一种降低陶瓷复合材料氧化的方法。 该方法包括使用第一化学气相渗透(CVI)工艺在物品的至少一部分上沉积碳化硅(SiC)基体的第一部分,在其中沉积硅(Si)掺杂的氮化硼(BN)层 使用第二CVI工艺的SiC矩阵的至少一部分,以及使用第三CVI工艺在所述SiC矩阵的第一部分的至少一部分或延续中沉积所述SiC矩阵的第二部分。