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1.发明申请Solution Processed Metal Oxide Thin Film Hole Transport Layers For High Performance Organic Solar Cells 有权用于高性能有机太阳能电池的溶液处理的金属氧化物薄膜空穴传输层公开(公告)号：US20140134781A1
公开(公告)日：2014-05-15
申请号：US14156712
申请日：2014-01-16
发明人： K. Xerxes Steirer , Joseph J. Berry , Jordan P. Chesin , Matthew T. Lloyd , Nicodemus Edwin Widjonarko , Alexander Miedaner , Calvin J. Curtis , David S. Ginley , Dana C. Olson
IPC分类号： H01L51/44
CPC分类号： H01L51/442 , H01L51/0036 , H01L51/4253 , H01L51/4273 , Y02E10/549
摘要： A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.
摘要翻译： 公开了一种在有机光伏器件和相关的有机电子器件中应用溶液处理的金属氧化物空穴传输层的方法。 金属氧化物可以衍生自能够溶解处理无定形p型金属氧化物的金属 - 有机前体。 具有溶液处理的有机光伏器件，金属氧化物，薄膜空穴传输层。
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公开(公告)号：US09859515B2
公开(公告)日：2018-01-02
申请号：US14200315
申请日：2014-03-07
CPC分类号： H01L51/4253 , H01L51/0026 , H01L51/0036 , H01L51/0047 , H01L2251/303 , Y02E10/549 , Y02P70/521
摘要： Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
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3.发明授权Solution processed metal oxide thin film hole transport layers for high performance organic solar cells 有权用于高性能有机太阳能电池的溶液处理金属氧化物薄膜空穴传输层公开(公告)号：US09543537B2
公开(公告)日：2017-01-10
申请号：US14156712
申请日：2014-01-16
发明人： K. Xerxes Steirer , Joseph J. Berry , Jordan P. Chesin , Matthew T. Lloyd , Nicodemus Edwin Widjonarko , Alexander Miedaner , Calvin J. Curtis , David S. Ginley , Dana C. Olson
CPC分类号： H01L51/442 , H01L51/0036 , H01L51/4253 , H01L51/4273 , Y02E10/549
摘要： A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.
摘要翻译： 公开了一种在有机光伏器件和相关的有机电子器件中应用溶液处理的金属氧化物空穴传输层的方法。 金属氧化物可以衍生自能够溶解处理无定形p型金属氧化物的金属 - 有机前体。 具有溶液处理的有机光伏器件，金属氧化物，薄膜空穴传输层。
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公开(公告)号：US20140256081A1
公开(公告)日：2014-09-11
申请号：US14200315
申请日：2014-03-07
IPC分类号： H01L51/00
CPC分类号： H01L51/4253 , H01L51/0026 , H01L51/0036 , H01L51/0047 , H01L2251/303 , Y02E10/549 , Y02P70/521
摘要： Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
摘要翻译： 提供了制造薄膜电荷选择性传输层的方法。 在一个实施方案中，形成薄膜电荷选择性传输层的方法包括：提供包含溶解在络合溶剂中的含有金属的反应性前体材料的前体溶液; 将前体溶液沉积在基底的表面上以形成膜; 以及通过使膜退火而在基板上形成电荷选择性传输层。
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