Multispectral photodiode
    1.
    发明授权
    Multispectral photodiode 有权
    多光谱光电二极管

    公开(公告)号:US06525387B2

    公开(公告)日:2003-02-25

    申请号:US09899057

    申请日:2001-07-06

    IPC分类号: H01L3100

    CPC分类号: H01L27/14652

    摘要: The present invention relates to a multispectral photodiode for infrared radiation comprising a substrate, a first semiconductor layer of first conductivity with a large band gap arranged on the substrate, a second semiconductor layer of first conductivity with a small band gap arranged on the first semiconductor layer, a first diode area which is formed from a zone of second conductivity with the first semiconductor layer, and a second diode area which is formed from a zone of second conductivity with the second semiconductor layer. The disadvantage of known multispectral photodiodes is that the first diode area, which is sensitive to the short-wave portion, is smaller than the second diode area, which is sensitive to the long-wave portion. The task of providing a multispectral photodiode, in which the relations of the areas of the first and second diode areas are matched to the relations of the photon flows of the assigned wavelength regions for the temperatures to be considered, is solved by arranging the first diode area concentrically around the second diode area.

    摘要翻译: 本发明涉及一种用于红外线辐射的多光谱光电二极管,其包括基板,布置在基板上的具有大带隙的第一导电性的第一半导体层,布置在第一半导体层上的具有小带隙的第一导电性的第二半导体层 由与第一半导体层的第二导电性区域形成的第一二极管区域和由具有第二半导体层的第二导电性区域形成的第二二极管区域。 已知的多光谱光电二极管的缺点是对短波段敏感的第一二极管区域比对长波段敏感的第二二极管区域小。提供多光谱光电二极管的任务是 通过将第一二极管区域同心地布置在第二二极管区域周围来解决第一和第二二极管区域的面积与所分配的波长区域的光子流的关系对应于待考虑的温度的关系。