Snapdown prevention in voltage controlled MEMS devices
    1.
    发明授权
    Snapdown prevention in voltage controlled MEMS devices 有权
    压控MEMS器件中的降压预防

    公开(公告)号:US07573695B1

    公开(公告)日:2009-08-11

    申请号:US11977875

    申请日:2007-10-26

    IPC分类号: H01T23/00

    CPC分类号: H01H59/0009 H01H2059/0018

    摘要: An architecture and method are provided for preventing snapdown in a voltage controlled MEMS device having a movable actuator with an actuator electrode coupled to a high voltage power supply (HVPS) through a drive circuit, the movable actuator suspended over a cavity electrode formed on a substrate and coupled to a common backplane supply (VssC). Generally, the circuit includes a number of first diodes coupled between the HVPS and the actuator electrode and/or the cavity electrode to provide a forward-biased path to transfer a positive charge to the HVPS when the accumulated charge exceeds a predetermined threshold. Preferably, the drive circuit further includes second diodes to provide a low impedance path to transfer a positives charge from the actuator electrode and/or the cavity electrode to a substrate ground when the accumulated charge results in or exceeds a predetermined threshold voltage. Other embodiments are also disclosed.

    摘要翻译: 提供了一种架构和方法,用于防止具有可移动致动器的压控MEMS装置中的卡扣,致动器具有通过驱动电路耦合到高压电源(HVPS)的致动器电极,可移动致动器悬挂在形成在基板上的空腔电极 并耦合到公共背板电源(VssC)。 通常,电路包括耦合在HVPS和致动器电极和/或空腔电极之间的多个第一二极管,以在累积电荷超过预定阈值时提供正向偏置路径以将正电荷传送到HVPS。 优选地,驱动电路还包括第二二极管,以在累积电荷导致或超过预定阈值电压时提供低阻抗路径以将正电荷从致动器电极和/或空腔电极传送到衬底接地。 还公开了其他实施例。