公开(公告)号：US20240243201A1

公开(公告)日：2024-07-18

申请号：US18618750

申请日：2024-03-27

Applicant: Anhui University

Inventor： Xingang REN ,  Wei ZHI ,  Huping JU ,  Zhixiang HUANG ,  Gang WANG ,  Kaikun NIU ,  Siliang WANG ,  Yingsong LI ,  Xianliang WU ,  Sungen CAO

IPC: H01L29/78 ,  H01L23/373 ,  H01L29/06

CPC classification number: H01L29/7824 ,  H01L23/3738 ,  H01L29/0607

Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.