公开(公告)号：US20130187200A1

公开(公告)日：2013-07-25

申请号：US13748171

申请日：2013-01-23

申请人： Ankit JAIN ,  Pradeep R. Nair ,  Muhammad Ashraful ALAM

发明人： Ankit JAIN ,  Pradeep R. Nair ,  Muhammad Ashraful ALAM

IPC分类号： G01N27/414

CPC分类号： G01N27/4143

摘要： Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

摘要翻译： 基于晶体管的粒子检测系统和方法可以被配置为检测带电和非带电粒子。 这样的系统可以包括与晶体管的栅极接触并将栅极与晶体管的电介质分开的支撑结构，并且晶体管可以具有接近的引入偏置和亚阈值区域偏置以促进颗粒检测。 晶体管可以被配置为响应于通过将颗粒固定到栅极而引起的门的刚度变化来改变通过晶体管的电流，并且基于晶体管的颗粒检测系统可以被配置为检测位于 最不利于当前流量的变化。