公开(公告)号：US07704327B2

公开(公告)日：2010-04-27

申请号：US10261391

申请日：2002-09-30

申请人： Ann P. Waldhauer ,  Juan M. Chacin ,  Brian H. Burrows

发明人： Ann P. Waldhauer ,  Juan M. Chacin ,  Brian H. Burrows

IPC分类号： C23C16/44 ,  C23F1/00 ,  H01L21/306 ,  F27B5/14 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4585

摘要： A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.

摘要翻译： 一种方法，包括在使用点从气流中除去杂质至处理室。 在气流上具有使用点净化器的装置。 一种装置，其包括适于放置在热处理中的尺寸的搁板，该热处理包括使得身体不透明于用于在热处理室中的基板的温度测量的辐射频率范围的材料的主体。

公开(公告)号：US06366861B1

公开(公告)日：2002-04-02

申请号：US08845589

申请日：1997-04-25

申请人： Ann P. Waldhauer ,  Norma B. Riley ,  Paul B. Comita

发明人： Ann P. Waldhauer ,  Norma B. Riley ,  Paul B. Comita

IPC分类号： G01B1102

CPC分类号： H01L22/12

摘要： A method for determining a wafer characteristic, such as the surface quality of a film formed on the wafer, using a film thickness monitor is described. In one embodiment, the method comprises the following steps. A measured spectrum for a processed wafer is generated. A set of parameters is chosen and then used to generate a calculated spectrum. The measured spectrum is compared to the calculated spectrum to determine if the two spectra match. If the two spectra do not match or the degree of nonconformity between the two spectra is greater than an acceptable error value, then there is probably a defect with the processed wafer. For example, the film formed on the wafer may have a nonuniform or hazy surface quality.

摘要翻译： 描述了使用膜厚监视器确定晶片特性的方法，例如在晶片上形成的膜的表面质量。 在一个实施例中，该方法包括以下步骤。 产生经处理晶片的测量光谱。 选择一组参数，然后用于生成计算的光谱。 将测量的光谱与计算的光谱进行比较，以确定两个光谱是否匹配。 如果两个光谱不匹配，或者两个光谱之间的不一致程度大于可接受的误差值，则处理的晶片可能存在缺陷。 例如，形成在晶片上的膜可能具有不均匀或模糊的表面质量。

公开(公告)号：US06277194B1

公开(公告)日：2001-08-21

申请号：US09422877

申请日：1999-10-21

申请人： AnnaLena Thilderkvist ,  Paul B. Comita ,  Ann P. Waldhauer

发明人： AnnaLena Thilderkvist ,  Paul B. Comita ,  Ann P. Waldhauer

IPC分类号： C30B2518

CPC分类号： C23C16/4405

摘要： A method of removing contaminants from a surface in a silicon substrate processing chamber. The method includes coating the surface which has been exposed to contaminants including metal particles with a material preferably including silicon. During coating, contaminants are collected by the material being applied. The method further includes removing the material and any contaminants that have been collected by the material during coating. The method can be performed after the surface has been exposed to contaminants from ambient air or moisture during cleaning or preventive maintenance procedures, for example. Also, the method is preferably performed before any baking procedures or before the chamber is heated to drive out any moisture that has been introduced to the chamber.

摘要翻译： 一种从硅衬底处理室中的表面除去污染物的方法。 该方法包括用优选包括硅的材料涂覆暴露于包括金属颗粒的污染物的表面。 在涂层期间，污染物被所施加的材料收集。 该方法还包括在涂覆期间去除材料和由材料收集的任何污染物。 例如，在清洁或预防性维护过程中，表面已暴露于来自环境空气或湿气的污染物之后，可以进行该方法。 此外，该方法优选在任何烘烤程序之前或在室被加热之前进行以排出已经被引入到室中的任何水分。

公开(公告)号：US5924058A

公开(公告)日：1999-07-13

申请号：US800863

申请日：1997-02-14

申请人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

发明人： Ann P. Waldhauer ,  David K. Carlson ,  Paul B. Comita

IPC分类号： G01B11/06 ,  G01N21/27 ,  H01L21/66 ,  H01L21/68 ,  H01L23/544 ,  G01R31/265

CPC分类号： H01L22/34 ,  H01L21/6835 ,  H01L22/20 ,  H01L22/12 ,  H01L2924/30105

摘要： A method and apparatus for measuring a reference sample in order to collect a reference characteristic, without moving the reference sample, is disclosed. In one embodiment, the method of the present invention comprises the following steps. An operator places a cassette of unprocessed wafers into a processing chamber of a processing tool that also includes a holding chamber. While the wafers are being processed, the holding chamber, which is coupled to a measurement tool, measures the reference sample that is mounted on a stage in the holding chamber. The resulting reference characteristic value (e.g., spectrum to determine film thickness) is then stored in the measurement tool's computer system. After a film is grown/formed on the wafers, the processed wafers are moved one by one into the holding chamber to be measured. A first wafer is placed on the stage in the holding chamber and a characteristic value for the first processed wafer is obtained using the measurement tool. The computer system of the measurement tool uses an algorithm to compare the reference characteristic value to the first wafer characteristic value to obtain a first differential value. The first differential value is then used to help determine the characteristic (e.g., film thickness) of the film formed on the first processed wafer. In another embodiment, a similar process is followed to measure another characteristic of a wafer, such as resistivity. These examples are illustrative and not limiting. Thus, the present invention can be used whenever a reference sample is to be measured to help determine a selected characteristic of a substrate or wafer.

摘要翻译： 公开了一种用于测量参考样本以便收集参考特征而不移动参考样本的方法和装置。 在一个实施例中，本发明的方法包括以下步骤。 操作者将未处理的晶片盒放置在还包括保持室的处理工具的处理室中。 当正在处理晶片时，耦合到测量工具的保持室测量安装在保持室中的台上的参考样品。 然后将所得到的参考特征值（例如，用于确定膜厚度的光谱）存储在测量工具的计算机系统中。 在薄片生长/形成在晶片上之后，将经处理的晶片一个接一个地移动到要测量的保持室中。 将第一晶片放置在保持室中的台上，并使用测量工具获得第一处理晶片的特征值。 测量工具的计算机系统使用算法​​将参考特征值与第一晶片特征值进行比较，以获得第一差分值。 然后使用第一微分值来确定形成在第一处理晶片上的膜的特性（例如，膜厚度）。 在另一个实施例中，遵循类似的过程来测量晶片的另一特性，例如电阻率。 这些实施例是说明性的而不是限制性的。 因此，每当要测量参考样品以帮助确定衬底或晶片的选定特性时，可以使用本发明。