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    Phase change record carries having crystalline nuclei and/or which produce crystallization structures when information is written thereon enabling that information to be more easily erased
    1.
    发明授权
    Phase change record carries having crystalline nuclei and/or which produce crystallization structures when information is written thereon enabling that information to be more easily erased 失效
    相变记录具有结晶核和/或当其上写入信息时产生结晶结构，使得能够更容易地擦除信息

    公开(公告)号：US5479392A

    公开(公告)日：1995-12-26

    申请号：US285834

    申请日：1994-08-04

    申请人： Antonius H. M. Holtslag ,  James H. Coombs ,  Wilma Van Es-Spiekman

    发明人： Antonius H. M. Holtslag ,  James H. Coombs ,  Wilma Van Es-Spiekman

    IPC分类号： G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/30

    CPC分类号： G11B7/126 ,  G11B7/00557 ,  G11B7/006

    摘要： Information storage system, device and record carriers for improved erasing of information written on a record carrier. A radiation beam is focused on a recording layer of a record carrier containing phase-change material. Crystalline information areas are written on initially amorphous portions of the recording layer by means of the radiation beam having its intensity modulated in accordance with write pulses. The information areas are erased (and changed back into amorphous portions) by means of the radiation beam having its intensity modulated in accordance with erase pulses. The time duration of each of the erase pulses (and, therefore, the intensity of the radiation beam being modulated in accordance therewith to heat the recording layer) and the cooling time of the recording layer thereafter is short enough that areas of the recording layer which are heated during erasing to a temperature above the crystallization temperature of the recording layer but lower than the melting point of the recording layer remain above the crystallization temperature for a period of time which is shorter than the crystallization time for the recording layer. The recording layer may contain a track and have more crystallization nuclei proximate to a centerline of the track than away from the centerline. In addition, the record carrier may be such that its reflection is larger when the recording layer has an amorphous structure than when it has a crystalline structure.

    摘要翻译： 信息存储系统，设备和记录载体，用于改善擦写记录载体上的信息。 辐射束聚焦在包含相变材料的记录载体的记录层上。 结晶信息区域通过具有根据写入脉冲调制的强度的辐射束写在记录层的初始非晶体部分上。 信息区域通过具有根据擦除脉冲调制的强度的辐射束被擦除（并且变回非晶部分）。 擦除脉冲的持续时间（并且因此，根据其加热记录层的辐射束的强度）和其后的记录层的冷却时间足够短，使得记录层的区域 在擦除到高于记录层的结晶温度但低于记录层的熔点的温度的温度下被加热保持高于结晶温度超过记录层的结晶时间的时间段。 记录层可以包含轨道并且具有比远离中心线更靠近轨道的中心线的更多的结晶核。 此外，记录载体可以是当记录层具有非晶体结构时比其具有晶体结构时的反射更大。

    Information storage system and device for improved erasing of information written on a record carrier
    2.
    发明授权
    Information storage system and device for improved erasing of information written on a record carrier 失效
    信息存储系统和装置，用于改善写在记录载体上的信息的擦除

    公开(公告)号：US5383172A

    公开(公告)日：1995-01-17

    申请号：US107532

    申请日：1993-08-17

    申请人： Antonius H. M. Holtslag ,  James H. Coombs ,  Wilma Van Es-Spiekman

    发明人： Antonius H. M. Holtslag ,  James H. Coombs ,  Wilma Van Es-Spiekman

    IPC分类号： G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/30 ,  G03C1/72

    CPC分类号： G11B7/126 ,  G11B7/00557 ,  G11B7/006

    摘要： Information storage system, device and record carrier for improved erasing of information written on the record carrier. A radiation beam is focused on a recording layer of the record carrier containing phase-change material. Crystalline information areas are written on initially amorphous portions of the recording layer by means of the radiation beam having its intensity modulated in accordance with write pulses. The information areas are erased by means of the radiation beam having its intensity modulated in accordance with erase pulses. The time duration of each of the erase pulses (and, therefore, the intensity of the radiation beam being modulated in accordance therewith to heat the recording layer) and the cooling time of the recording layer thereafter is short enough that areas of the recording layer which are heated during erasing to a temperature above the crystallization temperature of the recording layer but lower than the melting point of the recording layer remain above the crystallization temperature for a period of time which is shorter than the crystallization time for the recording layer. The recording layer may contain a track and have more crystallization nuclei proximate to a centerline of the track than away from the centerline.

    摘要翻译： 信息存储系统，设备和记录载体，用于改进擦写记录载体上的信息。 辐射束聚焦在包含相变材料的记录载体的记录层上。 结晶信息区域通过具有根据写入脉冲调制的强度的辐射束写在记录层的初始非晶体部分上。 信息区域通过具有根据擦除脉冲调制的强度的辐射束来擦除。 擦除脉冲的持续时间（并且因此，根据其加热记录层的辐射束的强度）和其后的记录层的冷却时间足够短，使得记录层的区域 在擦除到高于记录层的结晶温度但低于记录层的熔点的温度的温度下被加热保持高于结晶温度超过记录层的结晶时间的时间段。 记录层可以包含轨道并且具有比远离中心线更靠近轨道的中心线的更多的结晶核。

    Coating for DFB/DBR laser diodes
    3.
    发明授权
    Coating for DFB/DBR laser diodes 失效
    DFB / DBR激光二极管涂层

    公开(公告)号：US4951292A

    公开(公告)日：1990-08-21

    申请号：US371876

    申请日：1989-06-26

    申请人： Pieter I. Kuindersma ,  Wilma Van Es-Spiekman ,  Petrus P. G. Mols ,  Ingrid A. F. M. Baele

    发明人： Pieter I. Kuindersma ,  Wilma Van Es-Spiekman ,  Petrus P. G. Mols ,  Ingrid A. F. M. Baele

    IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/12 ,  H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/028 ,  H01S5/12 ,  H01S5/2277

    摘要： In DFB/DBR semiconductor diode lasers, competition may arise between the DFB (Distributed Feed-Back) mode corresponding to the period of the grid present and the FP (=Fabry-Perot) mode determined by the relative distance of the mirror surfaces, as a result of which the laser does not operate in one single mode. By providing an antireflex layer, this problem is suppressed, but other disadvantages are obtained, such as a large line width. However, by providing a phase layer on the antireflection coating, the operation of the laser in a single mode is combined with a comparatively narrow line width. Furthermore, a reflective coating can be applied to the phase layer. In this case, both the module and the phase of the effective reflection can be adjusted substantially independently of each other, as a result of which a narrow line width and SLM can be more readily combined.The antireflex coating, the phase layer and the reflective coating can be manufactured by means of not more than two materials having a suitable refractive index. Two particularly suitable materials are hafnium oxide and silicon dioxide, which can be applied to the mirror surfaces by means of the comparatively simple and attractive vapor deposition technique.