Image Sensor with Buried Light Shield and Vertical Gate
    1.
    发明申请
    Image Sensor with Buried Light Shield and Vertical Gate 有权
    图像传感器与埋地屏蔽和垂直门

    公开(公告)号:US20150035028A1

    公开(公告)日:2015-02-05

    申请号:US13959362

    申请日:2013-08-05

    Applicant: Apple Inc.

    Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

    Abstract translation: 图像传感器中的像素可以包括设置在一个基板中的光电检测器和存储区域,或者设置在一个基板中的光电检测器和另一个基板中的存储区域。 掩埋的光屏蔽设置在光电检测器和存储区之间。 诸如浮动扩散的感测区域可以与存储区域相邻,其中掩埋的光屏蔽件设置在光电检测器和存储和感测区域之间。 当光电检测器和存储区域设置在分离的基板中时,可以通过掩埋的光屏蔽形成垂直栅极,并且用于开始从光电检测器和存储区域传输电荷。 形成在垂直栅极附近或周围的转移通道提供用于电荷从光电检测器转移到存储区域的通道。

    Image sensor with buried light shield and vertical gate

    公开(公告)号:US09842875B2

    公开(公告)日:2017-12-12

    申请号:US15161179

    申请日:2016-05-20

    Applicant: Apple Inc.

    Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

    Image Sensor with Buried Light Shield and Vertical Gate

    公开(公告)号:US20160343756A1

    公开(公告)日:2016-11-24

    申请号:US15161179

    申请日:2016-05-20

    Applicant: Apple Inc.

    Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

    Image sensor with buried light shield and vertical gate
    4.
    发明授权
    Image sensor with buried light shield and vertical gate 有权
    图像传感器带埋地灯屏蔽和垂直门

    公开(公告)号:US09356061B2

    公开(公告)日:2016-05-31

    申请号:US13959362

    申请日:2013-08-05

    Applicant: Apple Inc.

    Abstract: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

    Abstract translation: 图像传感器中的像素可以包括设置在一个基板中的光电检测器和存储区域,或者设置在一个基板中的光电检测器和另一个基板中的存储区域。 掩埋的光屏蔽设置在光电检测器和存储区之间。 诸如浮动扩散的感测区域可以与存储区域相邻,其中掩埋的光屏蔽件设置在光电检测器和存储和感测区域之间。 当光电检测器和存储区域设置在分离的基板中时,可以通过掩埋的光屏蔽形成垂直栅极,并且用于开始从光电检测器和存储区域传输电荷。 形成在垂直栅极附近或周围的转移通道提供用于电荷从光电检测器转移到存储区域的通道。

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