IMAGE SENSOR WITH PHOTOSENSITIVE THIN FILM TRANSISTORS
    1.
    发明申请
    IMAGE SENSOR WITH PHOTOSENSITIVE THIN FILM TRANSISTORS 审中-公开
    具有感光薄膜晶体管的图像传感器

    公开(公告)号:US20130092941A1

    公开(公告)日:2013-04-18

    申请号:US13652007

    申请日:2012-10-15

    Applicant: Apple Inc.

    Abstract: An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes and source electrodes independently biased to reduce the effects of dark current. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. The photo TFT may be disposed above the storage capacitor to increase the exposed surface area of the photo TFT.

    Abstract translation: 图像传感器阵列包括具有光TFT的图像传感器,以响应于接收的图像产生光电流。 各个光电TFT分别具有各自的栅电极和源电极偏置以减少暗电流的影响。 存储电容器耦合到每个光电TFT并且在产生光电流时放电。 每个存储电容器耦合到将电流从存储电容器传递到数据线的读出TFT。 光电TFT可以设置在存储电容器的上方,以增加照片TFT的暴露的表面积。

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