公开(公告)号：US20250132244A1

公开(公告)日：2025-04-24

申请号：US18616727

申请日：2024-03-26

Applicant: Apple Inc.

Inventor： Bo YU ,  Haitao Cheng ,  Zhongning Liu ,  Zhang Jin

IPC: H01L23/522 ,  H01G4/40 ,  H01L27/01

Abstract: The present disclosure describes a semiconductor structure that is resistant to induced eddy currents. The semiconductor device includes a substrate, a device layer having electronic devices on the substrate, and a metallization layer above the device layer. The first metallization layer includes first and second terminal traces, a switch, and capacitors. A first terminal of a capacitor of the capacitors is coupled to the first terminal trace via the switch. A second terminal of the capacitor is coupled to the second terminal trace. The first and second terminal traces are disposed along the same side of the capacitors.