公开(公告)号：US20230386786A1

公开(公告)日：2023-11-30

申请号：US18303370

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Bon-Woong Koo ,  Tseh-Jen Hsieh ,  Gregory E. Stratoti

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/31703 ,  H01J2237/006 ,  H01J2237/022

Abstract: A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.