公开(公告)号：US20240136229A1

公开(公告)日：2024-04-25

申请号：US18462242

申请日：2023-09-06

Applicant: Applied Materials, Inc.

Inventor： Jody FRONHEISER ,  Sai Hooi YEONG ,  Benjamin COLOMBEAU ,  Balasubramanian PRANATHARTHIHARAN ,  Lequn LIU

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/15 ,  H01L29/423

CPC classification number: H01L21/823412 ,  H01L21/02507 ,  H01L29/15 ,  H01L29/42392

Abstract: A method of forming a multi-layer semiconductor device on a substrate includes forming a superlattice of a plurality of alternating first layers composed of a first material and second layers formed of a second material, removing the second layers of the superlattice, etching the first material layers to form trimmed first layers therefrom, wherein the quantity of material removed from different ones of the first layers are different amounts, forming a capping layer over the first layers, measuring at least one of the distance between the capping layers formed on the different ones of the first layers, the thicknesses of the different ones of the capping layers formed on different ones of the trimmed first layers, and the different thicknesses of the combined thickness of different ones of the trimmed first layers and the capping layer formed thereover, and based on differences in the measurements, calculating a new thickness of the etched first layers.