公开(公告)号：US20210366976A1

公开(公告)日：2021-11-25

申请号：US16878142

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Papo CHEN ,  John BOLAND ,  Schubert S. CHU ,  Errol Antonio C. SANCHEZ ,  Stephen MOFFATT

IPC: H01L27/146

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.