公开(公告)号：US20220342302A1

公开(公告)日：2022-10-27

申请号：US17862283

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Zhenxing Han ,  Luisa Bozano ,  Madhur Sachan

IPC: G03F7/004 ,  H01L21/308 ,  G03F7/40 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.