公开(公告)号：US20230034058A1

公开(公告)日：2023-02-02

申请号：US17389772

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Raymond HUNG ,  Mehul NAIK ,  Michael HAVERTY

IPC: H01L21/285 ,  H01L29/45 ,  H01L29/40 ,  H01L29/47

Abstract: Methods for reducing interface resistance of semiconductor devices leverage dual work function metal silicide. In some embodiments, a method may comprise selectively depositing a metal silicide layer on an Epi surface and adjusting a metal-to-silicon ratio of the metal silicide layer during deposition to alter a work function of the metal silicide layer based on whether the Epi surface is a P type Epi surface or an N type Epi surface to achieve a Schottky barrier height of less than 0.5 eV. The work function for a P type Epi surface may be adjusted to a value of approximately 5.0 eV and the work function for an N type Epi surface may be adjusted to a value of approximately 3.8 eV. The deposition of the metal silicide layer on the Epi surface may be performed prior to deposition of a contact etch stop layer and an activation anneal.

公开(公告)号：US20250125157A1

公开(公告)日：2025-04-17

申请号：US18634659

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Michael HAVERTY ,  Avgerinos V. GELATOS ,  Gaurav THAREJA ,  Lauren Mary BAGBY ,  Lakmal C. KALUTARAGE ,  Jeffrey W. ANTHIS ,  Archana KUMAR

IPC: H01L21/3205 ,  H01L21/48

Abstract: The methods of the present disclosure enable formation of highly conductive contacts that facilitate in increasing the device speed and lowering the operating voltages of semiconductor devices such as, but not limited to, metal-on-semiconductor (MOS) transistors and the like. In one embodiment, the methods create the optimal contacts, useful in N type or P type MOS devices, by forming metal-insulator-semiconductor (MIS) contact structure or a non-stoichiometric layer contact structure. It is noted that N type or P type contacts require different work function metals to achieve a low Schottky barrier height (SBH).