公开(公告)号：US20230113965A1

公开(公告)日：2023-04-13

申请号：US17499955

申请日：2021-10-13

Applicant: Applied Materials, Inc.

Inventor： Chengyu LIU ,  Ruitong XIONG ,  Bo XIE ,  Xianmin TANG ,  Yijun LIU ,  Li-Qun XIA

IPC: H01L21/02 ,  H01L21/3205

Abstract: A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.